型号 SPB02N60S5
厂商 Infineon Technologies
描述 MOSFET N-CH 600V 1.8A TO-263
SPB02N60S5 PDF
代理商 SPB02N60S5
产品培训模块 CoolMOS™ CP High Voltage MOSFETs Converters
产品变化通告 Product Discontinuation 18/Nov/2011
产品目录绘图 Mosfets TO-263
标准包装 1,000
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 1.8A
开态Rds(最大)@ Id, Vgs @ 25° C 3 欧姆 @ 1.1A,10V
Id 时的 Vgs(th)(最大) 5.5V @ 80µA
闸电荷(Qg) @ Vgs 9.5nC @ 10V
输入电容 (Ciss) @ Vds 240pF @ 25V
功率 - 最大 25W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 带卷 (TR)
其它名称 SP000012388
SPB02N60S5-ND
SPB02N60S5INTR
SPB02N60S5XT
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